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PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak rev. 02 ? 25 june 2009 product data sheet 1. product profile 1.1 general description logic level n-channel mosfet in lfpak package qualified to 150 c. this product is designed and qualified for use in a wide ran ge of industrial, communications and domestic equipment. 1.2 features and benefits ? advanced trenchmos provides low rdson and low gate charge ? high efficiency gains in switching power convertors ? improved mechanical and thermal characteristics ? lfpak provides maximum power density in a power so8 package 1.3 applications ? dc-to-dc converters ? lithium-ion battery protection ? load switching ? motor control ? server power supplies 1.4 quick reference data table 1. quick reference symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 150 c - - 30 v i d drain current t mb =25c; v gs =10v; see figure 1 ; [1] - - 100 a p tot total power dissipation t mb = 25 c; see figure 2 - - 121 w t j junction temperature -55 - 150 c avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =25c; i d = 100 a; v sup 30 v; r gs =50 ? ; unclamped - - 383 mj dynamic characteristics q gd gate-drain charge v gs = 4.5 v; i d =25a; v ds = 12 v; see figure 13 ; see figure 14 -9.3-nc q g(tot) total gate charge - 46.6 - nc
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 2 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak [1] continuous current is limited by package. 2. pinning information 3. ordering information static characteristics r dson drain-source on-state resistance v gs =10v; i d =15a; t j = 100 c; see figure 12 --1.8m ? v gs =10v; i d =15a; t j = 25 c; see figure 17 - 1.04 1.3 m ? table 1. quick reference ?continued symbol parameter conditions min typ max unit table 2. pinning information pin symbol description simplified outline graphic symbol 1s source s o t 1 0 2 3 ( l f pa k 2 ) 2s source 3s source 4g gate mb d mounting base; connected to drain 3 2 14 s d g m bb076 table 3. ordering information type number package name description version PSMN1R3-30YL lfpak2 plastic single-ende surface- mounted package (lfpak2); 4 leads sot1023
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 3 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak 4. limiting values [1] continuous current is limited by package. table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 150 c - 30 v v dgr drain-gate voltage t j 25 c; t j 150 c; r gs =20k ? -30v v gs gate-source voltage -20 20 v i d drain current v gs =10v; t mb = 100 c; see figure 1 [1] -100a v gs =10v; t mb =25c; see figure 1 [1] -100a i dm peak drain current t p 10 s; pulsed; t mb =25c; see figure 3 -923a p tot total power dissipation t mb =25c; see figure 2 -121w t stg storage temperature -55 150 c t j junction temperature -55 150 c t sld(m) peak soldering temperature -260c source-drain diode i s source current t mb =25c; [1] -100a i sm peak source current t p 10 s; pulsed; t mb =25c - 923 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =25c; i d =100a; v sup 30 v; r gs =50 ? ; unclamped -383mj fig 1. normalized continuous drain currnet as a function of mounting base temperature fig 2. normalized total power dissipation as a function of mounting base temperature 003aad141 0 50 100 150 200 250 0 50 100 150 200 t mb ( c) i d (a) t mb ( c) 0 200 150 50 100 03aa15 40 80 120 p der (%) 0
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 4 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aad145 10 -1 1 10 10 2 10 3 10 4 10 -1 1 10 10 2 v ds (v) i d (a) dc limit r dson = v ds / i d 100 ms 10 ms 1 ms 100 us t p = 10 us
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 5 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak 5. thermal characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base see figure 4 - 0.4 1.03 k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration 003aad142 10 -4 10 -3 10 -2 10 -1 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 t p (s) z th (j-mb) (k/w) single shot 0.02 0.05 0.1 0.2 = 0.5 t p t p t t p t =
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 6 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak 6. characteristics table 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j =25c 30 - - v i d =250a; v gs =0v; t j =-55c 27 - - v v gs(th) gate-source threshold voltage i d =1ma; v ds = v gs ; t j =25c; see figure 10 ; see figure 11 1.3 1.7 2.15 v i d =1ma; v ds = v gs ; t j = 150 c; see figure 10 0.65 - - v i d =1ma; v ds = v gs ; t j =-55c; see figure 10 --2.45v i dss drain leakage current v ds =30v; v gs =0v; t j =25c --1a v ds =30v; v gs =0v; t j = 150 c - - 100 a i gss gate leakage current v gs =15v; v ds =0v; t j = 25 c - - 100 na v gs =-15v; v ds =0v; t j = 25 c - - 100 na r dson drain-source on-state resistance v gs =4.5v; i d =15a; t j =25c; see figure 17 - 1.43 1.95 m ? v gs =10v; i d =15a; t j = 100 c; see figure 12 --1.8m ? v gs =10v; i d =15a; t j = 150 c; see figure 12 -1.92.8m ? v gs =10v; i d =15a; t j =25c; see figure 17 - 1.04 1.3 m ? r g gate resistance f = 1 mhz - 0.89 - ? dynamic characteristics q g(tot) total gate charge i d =25a; v ds =12v; v gs =10v; see figure 13 ; see figure 14 - 100 - nc i d =0a; v ds =0v; v gs =10v - 90 - nc i d =25a; v ds =12v; v gs =4.5v; see figure 13 ; see figure 14 - 46.6 - nc q gs gate-source charge i d =25a; v ds =12v; v gs =4.5v; see figure 13 ; see figure 14 - 17.9 - nc q gs(th) pre-threshold gate-source charge i d =25a; v ds =12v; v gs =4.5v; see figure 13 -11-nc q gs(th-pl) post-threshold gate-source charge -6.9-nc q gd gate-drain charge i d =25a; v ds =12v; v gs =4.5v; see figure 13 ; see figure 14 -9.3-nc v gs(pl) gate-source plateau voltage v ds =12v; see figure 13 ; see figure 14 -2.53-v c iss input capacitance v ds =12v; v gs = 0 v; f = 1 mhz; t j =25c; see figure 15 - 6227 - pf c oss output capacitance - 1415 - pf c rss reverse transfer capacitance - 619 - pf
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 7 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak t d(on) turn-on delay time v ds =12v; r l =0.5 ? ; v gs =4.5v; r g(ext) =5.6 ? -64-ns t r rise time - 108 - ns t d(off) turn-off delay time - 106 - ns t f fall time - 52 - ns source-drain diode v sd source-drain voltage i s =25a; v gs =0v; t j =25c; see figure 16 - 0.88 1.2 v t rr reverse recovery time i s =20a; di s /dt = -100 a/s; v gs =0v; v ds =20v -46-ns q r recovered charge - 53 - nc table 6. characteristics ?continued symbol parameter conditions min typ max unit fig 5. drain-source on-state resistance as a function of gate-source voltage; typical values. fig 6. input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aad147 0 2 4 6 8 0 5 10 15 20 v gs (v) r ds (on) (m ) 003aad152 10 3 10 4 10 -1 1 10 v gs (v) c (pf) c iss c rss
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 8 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak fig 7. forward transconductance as a function of drain current; typical values fig 8. output characteristics: drain current as a function of drain-source voltage; typical values fig 9. transfer characteristics: drain current as a function of gate-source voltage; typical valuesvalues fig 10. gate-source threshold voltage as a function of junction temperature 003aad153 0 50 100 150 200 0 25 50 75 100 i d (a) g fs (s) 003aad144 0 20 40 60 80 100 0123 v ds (v) i d (a) 3 3.5 10 2.6 2.4 2.8 v gs (v) = 2.2 003aad148 0 25 50 75 100 0123 v gs (v) i d (a) t j = 150 c 25 c t j ( c) -60 180 120 060 003aab272 1 2 3 0.5 1.5 v gs(th) (v) 0 max typ min
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 9 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak fig 11. sub-threshold drain current as a function of gate-source voltage fig 12. normalized drain-source on-state resistance factor as a function of junction temperature fig 13. gate charge waveform definitions fig 14. gate-source voltage as a function of gate charge; typical values 003aab271 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0123 v gs (v) i d (a) max typ min 03aa27 0 0.5 1 1.5 2 ? 60 0 60 120 180 t j ( c) a 003aaa508 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) 003aad150 0 2 4 6 8 10 0 25 50 75 100 q g (nc) v gs (v) v ds = 12v
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 10 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak fig 15. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values fig 16. source current as a function of source-drain voltage; typical values fig 17. drain-source on-state resistance as a function of drain current; typical values 003aad151 10 2 10 3 10 4 10 -1 1 10 10 2 v ds (v) c (pf) c iss c rss c oss 003aad149 0 25 50 75 100 0 0.25 0.5 0.75 1 v sd (v) i s (a) t j = 150 c 25 c 003aad146 0 2.5 5 7.5 10 0 25 50 75 100 i d (a) r ds(on) (m ) 3 4.5 2.8 3.5 v gs (v) = 2.6 10
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 11 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak 7. package outline fig 18. package outline sot1023; package outline references outline version european projection issue date iec jedec jeita sot1023 sot1023_po 08-10-13 09-05-26 unit mm max nom min 1.10 0.95 0.15 0.00 0.50 0.35 4.41 3.62 0.25 0.19 0.30 0.24 4.45 5.30 4.95 1.27 0.25 0.1 a dimensions note 1. plastic or metal protrusions of 0.15 mm per side are not included. p lastic single-ended surface-mounted package (lfpak2); 4 leads sot102 3 a 1 bb 1 0.85 b 2 cc 1 d (1) 4.70 4.45 d 1 (1) e (1) e 1 (1) 3.7 3.5 eh 6.2 5.9 l 1.3 0.8 l p 0.85 0.40 wy 8 0 0 2.5 5 mm scale x a c c 1 mounting base detail x a 1 l p c c y b b 1 a e wa e h d l 1 234 e 1 d 1 b 2 (3 )
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 12 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak 8. revision history table 7. revision history document id release date data sheet status change notice supersedes PSMN1R3-30YL_2 20090625 product data sheet - psmn2r3-30yl_1 modifications: ? status changed from objective to product. ? various changes to content. PSMN1R3-30YL_1 20090528 objective data sheet - -
PSMN1R3-30YL_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 june 2009 13 of 14 nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in su ch equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as th e item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. trenchmos ? is a trademark of nxp b.v. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the object ive specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the pr oduct specification.
nxp semiconductors PSMN1R3-30YL n-channel 30 v 1.3 m ? logic level mosfet in lfpak ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 25 june 2009 document identifier: PSMN1R3-30YL_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 9 legal information. . . . . . . . . . . . . . . . . . . . . . . .13 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10 contact information. . . . . . . . . . . . . . . . . . . . . .13

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